Method for producing a low-stress electrolessly deposited nickel

Details Method for producing a low-stress electrolessly deposited nickel Method for producing a low-stress electrolessly deposited nickel

1997-05-21

1999-03-02

Talbot, Brian K

Coating processes

Heat decomposition of applied coating or base material

427377, 4273835, 427405, 427438, B05D 302

Patent

active

058767959

ABSTRACT:
A process for producing a low-stress electrolessly deposited layer of nickel yielding a clean nickel film and having a wettable surface is described. Diffusion is performed in a non-oxidizing environment, using a gas mixture containing nitrogen. The diffusion temperature is optimally set at a temperature of at least 500.degree. C., i.e., at least 150.degree. C. below typical prior art diffusion temperatures. The presence of nitrogen during diffusion changes the direction of the outgoing born away from the surface of the film, and eliminates the requirement that the nickel film be plated on refractory metal that contains glass, which was previously required to provide a media for the boron to diffuse into it for its subsequent removal.

REFERENCES:
patent: 4055706 (1977-10-01), Galmiche et al.
patent: 4407860 (1983-10-01), Fleming et al.

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