Method for producing a low defect layer of silicon-on-sapphire w

Details Method for producing a low defect layer of silicon-on-sapphire w Method for producing a low defect layer of silicon-on-sapphire w

1978-06-09

1979-12-04

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148175, 148176, 357 91, H01L 21265, H01L 700

Patent

active

041770846

ABSTRACT:
A method is provided for producing a low-defect layer of silicon on a sapphire substrate. A silicon-on-sapphire (SOS) wafer is formed by initially epitaxially depositing silicon on the sapphire substrate to form a monocrystalline layer which is substantially free of lattice defects near its surface, but which exhibits a high defect density near the sapphire substrate. The wafer is subsequently subjected to an ion implantation to form an amorphous region in the silicon near the silicon-sapphire interface. The implanted ions are preferably "channeled" through the silicon layer to insure that the amorphous region will be localized in the imperfect region near the substrate, leaving the upper region of the silicon layer undamaged. During a subsequent high temperature anneal cycle, monocrystalline silicon is regrown from the residual upper regions of the silicon down to the silicon-sapphire interface, producing a silicon layer having a greatly reduced defect density throughout the layer.

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