Method for producing a light-emitting diode

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Substrate dicing

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438 34, 438 42, 438 46, H01L 2100

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active

060837691

ABSTRACT:
A method for producing a light-emitting diode includes the steps of: forming a single-layered or multi-layered Al.sub.x Ga.sub.y In.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) light-emitting layer, an Al.sub.x Ga.sub.y In.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) intermediate layer of a second conductivity type, and an Al.sub.x Ga.sub.y In.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) current diffusion layer of a second conductivity type on a GaAs substrate of a first conductivity type; forming a first electrode of a first conductivity type and a second electrode of a second conductivity type so as to contact the GaAs substrate and the current diffusion layer, respectively; forming a protection film on exposed surfaces of the current diffusion layer and the second electrode; forming grooves by dicing so as to interpose the second electrode and to reach the GaAs substrate; etching the light-emitting layer, the intermediate layer, and the current diffusion layer by 4 .mu.m or more with a bromine-type etchant from positions each facing the grooves in a direction parallel to a surface of the substrate so as not to reach an end portion of each of the adjacent second electrodes; and removing the protection film formed on the current diffusion layer and the second electrode.

REFERENCES:
patent: 4845405 (1989-07-01), Yamane et al.
patent: 5753940 (1998-05-01), Komoto

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