Method for producing a layer with reduced mechanical stresses

Etching a substrate: processes – Nongaseous phase etching of substrate

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1566541, 1566571, 216 96, 216 99, 427402, H01L 2102

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active

057531340

ABSTRACT:
For producing a layer having reduced mechanical stresses, the layer is composed of at least two sub-layers that are matched to one another such that stress gradients in the two layers substantially compensate. The method is particularly employable in the manufacture of structures in surface micromechanics.

REFERENCES:
patent: 4339303 (1982-07-01), Frisch et al.
patent: 4980018 (1990-12-01), Mu et al.
patent: 4980020 (1990-12-01), Douglas
patent: 4998267 (1991-03-01), Lee et al.
patent: 5059556 (1991-10-01), Wilcoxen
patent: 5262000 (1993-11-01), Welbourn et al.
Patent Abstracts of Japan--JP 63136521--vol. 12, No. 395 (E-671).
Patent Abstracts of Japan--JP-5102326--vol. 17, No. 453 (E-1417).
J. Electrochem. Soc., vol. 139, No. 12, Dec. 1992, Bhatnagar et al, "Low Stress Oxide-Polysilicon Sandwiched Microbridges", pp. 3623-3626.
Mater. Res. Soc., 1986 month unavailable, Ahn et al, "Properties of Tungsten Films Prepared by Magnetron Sputtering" (Abstract).
Proceedings of the 1989 International Symposium on Micro-Process. Conference, 1989 month unavailable, Itoh et al "Fabrication of an Ultra Low Stress Tungsten Absorber for X-Ray Masks".
Extended abstracts of the 19th Conference on Solid State Devices and Materials, 1987 month unavailable, Yamamoto, "Degradation of MOS Characteristics Caused by Internal Stresses in Gate Electrodes".
Conference Record of the 1988 IEEE International Symposium on Electrical Insulation, Jun., 1988, J. Kanicki et al, "Intrinsic Stress in Silicon Nitride and Silicon Dioxide Films Prepared by Various Deposition Techniques".
Elsevier Sequoia, 1992 month unavailable, Ristic et al, "Properties of Polysilicon Films Annealed by a Rapid Thermal Annealing Process", pp. 106-110.
Elsevier Sequoia, 1989 month unavailable, Guckel et al, "Fabrication of Micromechanical Devices from Polysilicon Films with Smooth Surfaces", pp. 117-122.

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