Etching a substrate: processes – Nongaseous phase etching of substrate
Patent
1994-11-23
1998-05-19
Tung, T.
Etching a substrate: processes
Nongaseous phase etching of substrate
1566541, 1566571, 216 96, 216 99, 427402, H01L 2102
Patent
active
057531340
ABSTRACT:
For producing a layer having reduced mechanical stresses, the layer is composed of at least two sub-layers that are matched to one another such that stress gradients in the two layers substantially compensate. The method is particularly employable in the manufacture of structures in surface micromechanics.
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Tung T.
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