Method for producing a II-VI compound semiconductor device inclu

Details Method for producing a II-VI compound semiconductor device inclu Method for producing a II-VI compound semiconductor device inclu

1992-08-18

1993-11-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437987, 156DIG82, 148DIG64, H01L 21385, H01L 21324

Patent

active

052623491

ABSTRACT:
In a method for producing a II-VI compound semiconductor device including mercury, a thin film of a group II element or a group II element compound, which is a solid at room temperature, is deposited on a surface of a p type II-VI compound semiconductor. Annealing is carried out to diffuse the group II element from the thin film into the p type II-VI compound semiconductor whereby a region of the p type II-VI compound semiconductor on which the thin film is present is converted to n type, resulting in a p-n junction. Therefore, instruments and materials are easily handled, increasing work efficiency and productivity. In addition, the annealing is carried out without a complicated temperature profile, resulting in a simple process.

REFERENCES:
patent: 4462959 (1984-07-01), Tregilgas
patent: 4588446 (1986-05-01), Tregilgas
patent: 4927773 (1990-05-01), Jack et al.
patent: 4960728 (1990-10-01), Schaake et al.
patent: 5028296 (1991-07-01), Tregilgas

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