Method for producing a hydrogenated vertical-cavity surface-emit

Details Method for producing a hydrogenated vertical-cavity surface-emit Method for producing a hydrogenated vertical-cavity surface-emit

1997-04-25

1998-06-30

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

438 29, 438 38, 438 46, 372 44, H01L 2120, H01S 319

Patent

active

057733198

ABSTRACT:
A method for producing a vertical-cavity surface-emitting laser, includes the steps of: forming a bottom mirror layer, an active layer and a top mirror layer on a semiconductor substrate; forming an antireflection layer on a rear surface of the semiconductor substrate; selectively etching peripheral portions of the antireflection layer to form a first electrode; defining laser emission portions through etching processing; forming a hydrogenated barrier over an entire surface of the resultant structure; forming a post; forming a passivation layer through the hydrogenating of the exposed top mirror layer and the portions of the active layer; forming a planarization film after the partial exposure of the top mirror and forming a second electrode pad to which the exposed top mirror layer contacts.

REFERENCES:
patent: 5115442 (1992-05-01), Lee et al.
patent: 5416044 (1995-05-01), Chino et al.
Vakhshoori, D., et al. Top-surface emitting lases with 1.9V threshold voltage and the effect of spatial hole burning on their transverse mode operation and efficiencies, Appl. Phys. Lett. vol. 62 (13), Mar. 29, 1993, pp. 1448-1450.
Yoo, B.-S., et al. Stable transverse mode emission in vertical-cavity surface-emitting lasers antiguided by amorphous GaAs layer, Electronics Letters, vol. 32, No. 2, Jan. 18, 1996, pp. 116-117.
Yang, G.M., et al. Ultralow threshold VCSELs fabricated by selective oxidation from all epitaxial structure, Department of Electrical Engineering/Electrophysics, University of Southern California, pp. 2-3.

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