Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Forming lateral transistor structure
Reexamination Certificate
2011-06-07
2011-06-07
Stark, Jarrett J (Department: 2822)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Forming lateral transistor structure
C029S025030
Reexamination Certificate
active
07955939
ABSTRACT:
The present invention is a method for the production of a high capacitance foil for use as a cathode in an electrolytic capacitor by forming a nitride layer on at least one surface of the foil by annealing the foil at an elevated temperature in the presence of nitrogen gas (N2). By this method, an enhanced foil surface area can be achieved. Since the double layer capacitance of a cathode is proportional to the effective surface area of the cathode, the annealing process increases the cathode capacitance such that it can be effectively used in a high-gain multiple stacked anode electrolytic capacitor. After production of the foil by said method, the foil is cut into a shape that is suitable for assembly in such an electrolytic capacitor, which is commonly used in an implantable cardiac defibrillator (ICD).
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Mitchell Steven M.
Pacesetter Inc.
Stark Jarrett J
Tynes, Jr. Lawrence
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