Method for producing a high capacitance cathode by annealing...

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Forming lateral transistor structure

Reexamination Certificate

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C029S025030

Reexamination Certificate

active

07955939

ABSTRACT:
The present invention is a method for the production of a high capacitance foil for use as a cathode in an electrolytic capacitor by forming a nitride layer on at least one surface of the foil by annealing the foil at an elevated temperature in the presence of nitrogen gas (N2). By this method, an enhanced foil surface area can be achieved. Since the double layer capacitance of a cathode is proportional to the effective surface area of the cathode, the annealing process increases the cathode capacitance such that it can be effectively used in a high-gain multiple stacked anode electrolytic capacitor. After production of the foil by said method, the foil is cut into a shape that is suitable for assembly in such an electrolytic capacitor, which is commonly used in an implantable cardiac defibrillator (ICD).

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patent: 3578570 (1971-05-01), Harvey
patent: 5547518 (1996-08-01), Johnson et al.
patent: 5822177 (1998-10-01), Popp et al.
patent: 5980977 (1999-11-01), Deng et al.
patent: 7715174 (2010-05-01), Beauvais et al.
patent: 9814970 (1998-04-01), None

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