Method for producing a halftone phase shift mask blank, a...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C428S433000

Reexamination Certificate

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06844119

ABSTRACT:
A method for producing a halftone phase shift mask blank having a semi-transmission film on a transparent substrate includes alternately laminating, on a transparent substrate, thin layers substantially made of nitrogen and titanium and thin layers substantially made of nitrogen and silicon to thereby form thereon a multi-layered semi-transmission film, followed by heating the semi-transmission film at 300° C. or higher.

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patent: 5939227 (1999-08-01), Smith
patent: 6395433 (2002-05-01), Smith
patent: 6653027 (2003-11-01), Angelopoulos et al.
Dieu, et al., “Ion Beam Sputter-Deposited SiN/TiN Attenuating Phase-Shift Photoblanks,” 20thAnnual BACUS Symposium on Photomask Technology, Proceedings of SPIE vol. 4186, 2001 SPIE, pp. 810-817.
Carriere, et al., “Characterization of Silicon Nitride Films Deposited on GaAs by RF Magnetron Cathodic Sputtering,” The Electrochemical Society,Inc., J. Electrochem. Soc., vol. 137, No. 5, May 1990.
H. Windischmann, “An Intrinsic Stress Scaling Law for Polycrystalline Thin Films Prepared by Ion Beam Sputtering,” J. Appl. Phys., vol. 62, No. 5, Sep. 1, 1987.

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