Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1983-06-06
1984-08-14
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148172, 29569L, 156616R, H01L 21208
Patent
active
044655274
ABSTRACT:
A method for producing a Group II-VI compound semiconductor crystal containing a Group VI element other than Te by a temperature-difference method for growing the crystal from a solution containing Te, the Group VI element and a Group II-VI compound crystal source where Te is used as a major component of a solvent and the crystal is grown at a relatively low temperature by maintaining the vapor pressure of the VI group element at a predetermined value. This method can form a practical p-n junction by using two solutions, one containing a p-type additive and the other an n-type additive, and contacting a substrate successively with each of the solutions for a predetermined time length.
REFERENCES:
patent: 3615877 (1971-10-01), Yamashita
patent: 4190486 (1980-02-01), Kyle
Periodic Table of The Elements, Sargent-Welch Scientific Co., Skokie, Ill., 1979.
Electronic Materials EFM-78-12 (1978), issued by The Institute of Electrical Engineers of Japan entitled: "Growth of ZnS, ZnSe From Solution Containing Te and Their Light-emitting Characteristics".
Journal of Crystal Growth, 31 (1975), pp. 215-222.
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