Method for producing a group II-VI compound semiconductor thin f

Details Method for producing a group II-VI compound semiconductor thin f Method for producing a group II-VI compound semiconductor thin f

1993-12-17

1996-04-16

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 94, 257103, 257201, 257627, 257628, H01L 2906

Patent

active

055085229

ABSTRACT:
A method for fabricating a semiconductor thin film is disclosed. The method includes the step of epitaxially growing a semiconductor layer made of a group II-VI compound semiconductor to have a thickness of at least one atomic layer or more, on a main plane of a single-crystal semiconductor substrate, the semiconductor substrate having one of a diamond structure and a zinc blende structure, the main plane being inclined by an angle in the range of 2 to 16 degrees with respect to a (100) plane.

REFERENCES:
patent: 4987472 (1991-01-01), Endo et al.
patent: 5016252 (1991-05-01), Hamada et al.
Haase, M. A., et al.,"Blue-green laser diodes" Appl. Phys. Lett. (1991) 59(11): 1272-1274.
Ichino, K., et al., "Design and fabrication of II-VI semiconductor heterostructures" OYO BUTURI (A monthly publication of The Japan Society of Applied Physics) (1992) 61(2): 117-125.

Affiliated with

Also associated with

Rating

Method for producing a group II-VI compound semiconductor thin f does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing a group II-VI compound semiconductor thin f, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a group II-VI compound semiconductor thin f will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-327043