Method for producing a gallium phosphide epitaxial wafer

Details Method for producing a gallium phosphide epitaxial wafer Method for producing a gallium phosphide epitaxial wafer

1994-10-20

1996-11-05

Nguyen, Nam

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Liquid phase epitaxial growth

117 58, 117955, 437127, H01L 2120

Patent

active

055713211

ABSTRACT:
This disclosure herein pertains to a method for producing a GaP epitaxial wafer used for fabrication of light emitting diodes having higher brightness than light emitting diodes fabricated from a GaP epitaxial wafer produced by a conventional method have. The method comprises the steps of: preparing a GaP layered substrate 15 with one or more GaP layers on a GaP single crystal substrate 10 in the first series of liquid phase epitaxial growth; obtaining a layered GaP substrate 15a by eliminating surface irregularities of said GaP layered substrate 15 by mechano-chemical polishing to make the surface to be planar; and then forming a GaP light emitting layer composite 19 on said layered GaP substrate 15a in the second series of liquid phase epitaxial growth.

REFERENCES:
patent: 3619304 (1971-11-01), Naito et al.
patent: 3972750 (1976-08-01), Gutierrez et al.
patent: 4008106 (1977-02-01), Gutierrez et al.
patent: 4477294 (1984-10-01), Gutierrez et al.
"GaP Liquid Phase Epitaxial Growth and Light Emitting Diodes I"; Tsuyoshi Kotani et al.; Fujitsu-Scientific and Technical Journal, vol. 9, No. 3, Sep. 1973, pp. 133-148.
"Evaluation of a Liquid phase Epitaxy System for Production of GaP P-N Junction Material"; Electrochemical Society, vol. 72-2, No. 230, Oct. 1974, Florida; pp. 572-574; R. C. Vehse et al.

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