Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2007-06-05
2007-06-05
Sines, Brian (Department: 1743)
Semiconductor device manufacturing: process
Chemical etching
C422S050000, C422S068100, C422S081000, C422S105000, C422S105000, C422S105000, C422S105000, C436S043000, C436S174000, C436S180000, C438S014000, C438S016000, C438S017000, C438S022000, C438S048000, C438S049000, C438S051000, C438S478000, C438S455000
Reexamination Certificate
active
09873455
ABSTRACT:
In the case of a method for producing a fluid device with a fluid structure having an active height, a basic wafer is provided, which comprises a supporting substrate, an insulating layer on the supporting substrate and a patterned layer on the supporting substrate, the thickness of the patterned layer determining the active height of the fluid structure. Following this, the fluid structure is produced in the patterned layer of the basic wafer, said fluid structure extending through the semiconductor layer. A transparent wafer is then applied so that the fluid structure is covered. Subsequently, the supporting substrate and the insulating layer are removed from the back so that the fluid structure is exposed at a second surface of the patterned layer. Finally, a second transparent wafer is attached to the exposed second surface of the semiconductor layer so that the fluid structure is covered. The essential parameter of the fluid device, viz. the active height of the fluid structure, need no longer be controlled making use of the etching parameters, but is already determined by the specifications of the starting material, e.g. an SOI wafer. This means that economy-priced fluid devices can be produced with high precision.
REFERENCES:
patent: 5498392 (1996-03-01), Wilding et al.
patent: 5744366 (1998-04-01), Kricka et al.
patent: 5783452 (1998-07-01), Jons et al.
patent: 6153076 (2000-11-01), Davidson et al.
patent: 6251343 (2001-06-01), Dubrow et al.
patent: 6488897 (2002-12-01), Dubrow et al.
patent: WO 96/41864 (1996-12-01), None
Chr. Burrer, and J. Esteve,High-Precision BESOI-based Resonsant Accelerometer; Sensors and Actuators; Elsevier Science S.A.; 1995.
A. Benitez, J. Esteve, and J. Bausells;Bulk Silicon Microelectromechanical Devices Fabricated From Commercial Bonded and Etched-Back Silicon-On-Insulator Substrates; Sensors and Actuators; Elsevier Science S.A.; 1995.
Frech Johannes
Mueller Martin
Nommensen Peter
Staehler Cord F.
Strobelt Tilo
febit biotech GmbH
Glenn Michael A.
Glenn Patent Group
Sines Brian
LandOfFree
Method for producing a fluid device, fluid device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing a fluid device, fluid device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a fluid device, fluid device and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3864770