Method for producing a floating gate memory device including imp

Details Method for producing a floating gate memory device including imp Method for producing a floating gate memory device including imp

1995-06-01

1997-02-04

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437984, 437983, H01L 218247

Patent

active

055997279

ABSTRACT:
According to the present invention, a method for producing a nonvolatile semiconductor memory device is provided. The method includes the steps of: forming stripe-shaped silicon portions including a plurality of first portions to be used as a plurality of floating gates and a plurality of second portions interposed between two adjacent portions of the plurality of first portions by patterning a silicon film; forming a conductive film so as to cover an insulating film; forming a control gate so as to cover the plurality of first portions of the stripe-shaped silicon portions by patterning the conductive film; converting the plurality of second portions of the stripe-shaped silicon portions into a silicon oxide film, and forming the plurality of floating gates from the plurality of first portions by thermally oxidizing the plurality of second portions; and implanting impurity ions through the silicon oxide film into the active region on the semiconductor substrate by using the control gate as a mask, thereby forming a source region and a drain region in the active region.

REFERENCES:
patent: 5029130 (1991-07-01), Yeh
patent: 5045488 (1991-09-01), Yeh
patent: 5067108 (1991-11-01), Jenq
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