Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1995-05-10
1997-06-10
Tsai, Jey
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
H01L 2170, H01L 2700
Patent
active
056375220
ABSTRACT:
A polycrystal silicon layer is used to a cell plate of a capacitor in a memory cell portion including a plurality of memory cells, and a Si.sub.3 N.sub.4 film layer is used to form a capacitor above a first transistor in the memory cell. The polycrystal silicon layer and Si.sub.3 N.sub.4 film layer formed above a second transistor in a peripheral circuit are simultaneously removed by an etching method during the same process. Therefore an aspect ratio and a shape of a contact hole in the peripheral circuit are improved, and thus the step coverage of the wiring in the peripheral circuit can be improved.
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patent: 4845544 (1989-07-01), Shimizu
patent: 4905064 (1990-02-01), Yabu
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Fujitsu Limited
Tsai Jey
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