Method for producing a doped region in a substrate

Details Method for producing a doped region in a substrate Method for producing a doped region in a substrate

1992-05-11

1993-12-28

Fourson, George

Fishing, trapping, and vermin destroying

437164, 437238, 437950, 437954, 148DIG34, H01L 21225

Patent

active

052739341

ABSTRACT:
A doped region (14) is produced in a substrate (11) of silicon by diffusion of dopant from a doped glass layer (13) that is arranged on an intermediate layer (12) situated on the substrate (11) . The dopant concentration in the doped region (14) is thereby limited by the intermediate layer (12). The doped glass layer (13) is particularly produced by chemical vapor deposition of (B(OSi(CH.sub.3).sub.3).sub.3).

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