Method for producing a doped polycide layer on a semiconductor s

Details Method for producing a doped polycide layer on a semiconductor s Method for producing a doped polycide layer on a semiconductor s

1991-10-17

1993-03-02

Quach, T. N.

Fishing, trapping, and vermin destroying

437193, 437200, 437 44, H01L 21335

Patent

active

051908883

ABSTRACT:
Method for producing a doped polycide layer on a semiconductor substrate. A polycide layer (14) is formed by producing a metal silicide layer (13a) on a polysilicon layer (12a). After the formation thereof, the polycide layer (14) is doped to an ulltimate value of the dopant concentration by an implantation. The polysilicon layer can be pre-doped. The method is particularly suited for the manufacture of p.sup.+ -doped polycide gates in a salicide process.

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