Method for producing a distributed feedback semiconductor laser

Details Method for producing a distributed feedback semiconductor laser Method for producing a distributed feedback semiconductor laser

1992-07-24

1994-03-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437129, 437130, 156610, 372 96, H01L 21203

Patent

active

052926850

ABSTRACT:
In a first crystal growth step, a first cladding layer, an active layer, and an optical wave-guide layer are sequentially grown on a semiconductor substrate. A diffraction grating is formed at a surface of the optical waveguide layer. In a second crystal growth step, a current block layer is grown on the optical waveguide layer having the diffraction grating. The current block layer is selectively etched to expose the diffraction grating and thus to form a stripe groove. In a third crystal growth step, a second cladding layer is grown on the diffraction grating inside the stripe groove and on the current block layer.

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