Method for producing a diode

Details Method for producing a diode Method for producing a diode

1995-10-10

1997-11-11

Niebling, John

Fishing, trapping, and vermin destroying

437904, 148DIG12, 148DIG39, 257469, 257551, H01L 2104

Patent

active

056863195

ABSTRACT:
In a method for producing a diode, a first, strongly positively doped silicon wafer is bonded in accordance with the silicon fusion method to a second, weakly negatively doped silicon wafer, and subsequently the weakly negatively doped second silicon wafer is ground down to a predetermined thickness. A chromium layer which contains a small percentage of arsenic is used for resistive contact-making on the negatively doped second silicon wafer. In this way, a diode is obtained which has a small forward voltage in conjunction with a precise breakdown voltage.

REFERENCES:
patent: 3602778 (1971-08-01), Ura
patent: 3638301 (1972-02-01), Matsuura
patent: 4891329 (1990-01-01), Reisman et al.
patent: 4897362 (1990-01-01), Delgado et al.
patent: 5232870 (1993-08-01), Ito et al.

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