Method for producing a dielectric interlayer and storage...

Semiconductor device manufacturing: process – Making passive device – Trench capacitor

Reexamination Certificate

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C257S301000, C257S302000, C257S303000, C257S304000, C257S305000, C257S306000, C257S310000, C438S381000, C438S386000, C438S390000, C438S391000

Reexamination Certificate

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07416952

ABSTRACT:
A dielectric interlayer, especially for a storage capacitor, is formed from a layer sequence subjected to a temperature process, wherein the layer sequence has at least a first metal oxide layer and a second metal oxide layer formed by completely oxidizing a metal nitride layer to higher valency.

REFERENCES:
patent: 2005/0233589 (2005-10-01), Aegerter et al.
patent: 2006/0102983 (2006-05-01), Iijima
patent: 2007/0272965 (2007-11-01), Hintze et al.
patent: 1 282 160 (2003-02-01), None
German Office Action dated Jan. 24, 2007 directed to counterpart DE application No. 10 2006 024 214.

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