Method for producing a bonded wafer

Details Method for producing a bonded wafer Method for producing a bonded wafer

2011-08-23

2011-08-23

Chambliss, Alonzo (Department: 2892)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S474000, C438S663000, C438S508000, C438S508000

Reexamination Certificate

active

08003494

ABSTRACT:
In a method for producing a bonded wafer by bonding a wafer for active layer and a wafer for support layer and thinning the wafer for active layer according to the invention, oxygen ions are implanted into the wafer for active layer at a state of holding a temperature of the wafer for active layer below 200° C. under a dose of 5×1015to 5×1016atoms/cm2, whereby there can be obtained a bonded wafer being excellent in the thickness uniformity after thinning and having a dramatically improved surface roughness.

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