Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1982-09-28
1983-10-11
Saba, W. G.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29578, 29587, 148 15, 148175, 148187, 156628, 156653, 156657, 357 34, 357 50, 357 54, 357 59, H01L 2120, H01L 21318
Patent
active
044083874
ABSTRACT:
A method for producing a bipolar transistor which has no emitter-base short and which attains a high density of integration. The method comprises the steps of forming a polycrystalline silicon layer on an anti-oxidation masking layer formed on a base region, selectively etching the polycrystalline silicon layer to form an opening, introducing impurities into the base region to form an emitter region, converting the polycrystalline silicon layer into an oxide layer whereby the size of the opening is reduced, selectively etching the anti-oxidation masking layer to form an emitter electrode opening, and forming electrodes.
REFERENCES:
patent: 3507716 (1970-04-01), Nishida et al.
patent: 3710204 (1973-01-01), Batz
patent: 3909925 (1975-10-01), Forbes et al.
patent: 4110779 (1978-08-01), Rathbone et al.
patent: 4266985 (1981-05-01), Ito et al.
patent: 4376664 (1983-03-01), Hataishi et al.
Kemlage et al., "Open Tube Diffusions", I.B.M. Tech. Discl. Bull., vol. 13, No. 4, Sep. 1970, p. 911.
Fujitsu Limited
Saba W. G.
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