Method for producing a bipolar semiconductor device having SiC-b

Details Method for producing a bipolar semiconductor device having SiC-b Method for producing a bipolar semiconductor device having SiC-b

1996-11-01

1998-09-29

Niebling, John

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

438320, 438931, 148DIG18, 148DIG148, H01L 218222

Patent

active

058145460

ABSTRACT:
A method for producing a bipolar semiconductor device having a first layer doped according to a first doping type, the first layer being adapted to have minority charge carriers injected thereinto from a second layer of the device of a doping type opposite to that of the first layer in a forward conducting state of the device, comprises the steps of a) epitaxially growing the first layer and b) providing at least one region of the first layer with the minority charge carriers having a lifetime lower than in other parts of the first layer, the lower lifetime region of the first layer being formed directly during the epitaxial growth of this region by changing composition of substances fed to the first layer for the growth thereof when the region is grown.

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