Coating processes – Coating by vapor – gas – or smoke
Patent
1990-09-25
1992-02-25
Beck, Shrive
Coating processes
Coating by vapor, gas, or smoke
118719, 118723, 118725, 118728, 427 38, 427 451, 427 51, C23C 1644
Patent
active
050912178
ABSTRACT:
Each of a plurality of individually heated circularly located susceptors supports and heats one of a plurality of wafers within a processing chamber. An overhead gas dispersion head, vertically aligned with each susceptor, directs, in combination with downstream flow control structure, flow of a reactant gas radially uniformly across the supported wafer. A spider sequentially relocates each of the wafers, as a group, to an adjacent susceptor. Wafer handling apparatus replaces each processed wafer to provide a high production rate throughput. A source of RF energy radiating essentially primarily between each gas dispersion head and its associated susceptor provides a plasma enhanced environment and the low level intensity elsewhere within the reactor reduces residual deposits.
REFERENCES:
patent: 4618542 (1986-10-01), Morita et al.
Aggarwal Ravinder K.
Brown Paul B.
Curtin John H.
Hey H. Peter W.
Mazak William A.
Advanced Semiconductor Materials, Inc.
Beck Shrive
Owens Terry J.
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