Method for processing the etched surface of a semiconductive or

Details Method for processing the etched surface of a semiconductive or Method for processing the etched surface of a semiconductive or

1992-04-24

1994-03-22

Valentine, Donald R.

Electrolysis: processes, compositions used therein, and methods

Electrolytic coating

Coating selected area

205125, 205157, 205229, C25D 1132

Patent

active

052961265

ABSTRACT:
The present invention concerns a method for processing an etched surface of a semiconductive or semi-insulating substrate. It further concerns integrated circuits manufactured by this method and an anodic oxidation apparatus for implementing the method. The invention is particularly applicable to the manufacture of integrated circuits with ultrafine details (below 1.mu.) and in particular to manufacturing electro-optical devices. Anodic oxidation with controlled voltage and current is used to peel a constant thickness of oxidation off a surface of the substrate so as to improve the subsequent epitaxial growth.

REFERENCES:
patent: 3536600 (1970-10-01), Van Dijk et al.
patent: 3898141 (1975-08-01), Ermanis et al.
patent: 4026741 (1977-05-01), Chang et al.
patent: 4194954 (1980-03-01), Faktor et al.
patent: 5174870 (1992-12-01), Puma
patent: 5178967 (1993-01-01), Rosenfeld et al.
"Anodic oxidation of CdTe as a thin-layer removal technique", Yoshikawa et al., Journal of Applied Physics, vol. 18, No. 1, Jan. 1979.
"Repeated removal of thin layers of silicon by anodic oxidation", Journal of the Electrochemical Society, vol. 123, No. 9, Sep. 1976, Barber et al., pp. 1404-1408.
"Fabrication of Silicon Microstructures Based on Selective Formation and Etching of Porous Silicon", 1046 Journal of the Electrochemical Society 135 (1988) Aug., No. 8, Manchester, NH, USA.
"Controlled sectioning technique for small gallium arsenide samples", Magee et al., Review of Scientific Instruments, vol. 43, No. 8, Aug. 1972, pp. 1218-1220.

Affiliated with

Also associated with

Rating

Method for processing the etched surface of a semiconductive or does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for processing the etched surface of a semiconductive or , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for processing the etched surface of a semiconductive or will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-434318