Method for processing single-crystal semiconductor wafer for flu

Details Method for processing single-crystal semiconductor wafer for flu Method for processing single-crystal semiconductor wafer for flu

1998-04-22

2000-03-14

Chang, Joni

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Making plural separate devices

438465, 427157, H01L 2144

Patent

active

060371919

ABSTRACT:
A method for processing a single-crystal semiconductor wafer is provided which is capable of minimizing a dead space to maximize the number of elements per one wafer and preventing leakage luminescence and a reduction in luminance. A phosphor is deposited on each of a plurality of regions defined in the wafer at predetermined intervals and a water-resistant protective film is formed on the phosphor. Then, the wafer is cut for every one of the regions by means of a dicing saw using cutting water, to thereby provide a plurality of chips. The chips are subject to calcination during a calcination step in manufacture of fluorescent display device in which the chips are used as a display section, resulting in the protective film being evaporated.

REFERENCES:
patent: 5597767 (1997-01-01), Mignardi et al.
patent: 5789857 (1998-08-01), Yamaura et al.
patent: 5872046 (1999-02-01), Kaeriyama et al.

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