Method for processing semiconductor material

Details Method for processing semiconductor material Method for processing semiconductor material

1996-11-21

1999-06-15

Breneman, Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438714, 438719, 216 65, H01L 21302

Patent

active

059121866

ABSTRACT:
A method for processing semiconductor materials such as a crystalline ingot or a wafer and an apparatus employed therein. An etching gas is supplied on the surface of a semiconductor material, while laser irradiation or light quantum irradiation is applied on a predetermined part of the semiconductor material surface, whereby a component of the etching gas is excited, reacted with a component of the semiconductor material and evaporated for elimination. Thereby, semiconductor materials can be processed hygienically, easily and with high precision.

REFERENCES:
patent: 2841477 (1958-07-01), Hall
patent: 5151389 (1992-09-01), Zappella
patent: 5352327 (1994-10-01), Witowski
patent: 5534107 (1996-07-01), Gray et al.

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