Metal working – Barrier layer or semiconductor device making
Patent
1991-12-13
1994-05-10
Chaudhuri, Olik
Metal working
Barrier layer or semiconductor device making
2041921, 20429825, 20429835, 118719, 118729, 414217, C23C 1400, C23C 1600, C23C 1308
Patent
active
053104102
ABSTRACT:
A method wherein wafers are transferred between a loading chamber and a central vacuum chamber. A plurality of first vacuum processing chambers are disposed in a satellite relationship around the central chamber. A plurality of second non-vacuum chambers are interspersed with the first chambers in a satellite relationship around the central chamber. A second central vacuum chamber communicates with one of the first chambers through a valve. Third and fourth pluralities of chambers are disposed in a satellite relationship around the second central chamber to respectively perform functions similar to those performed by the first and second chambers, the fourth chambers being interspersed with the third chambers.
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Begin Robert G.
Clarke Peter J.
Chaudhuri Olik
Graybill David E.
Roston Ellsworth R.
Schwartz Charles H.
Sputtered Films, Inc.
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