Method for processing one-dimensional nano-materials

Semiconductor device manufacturing: process – Electron emitter manufacture

Reexamination Certificate

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C438S666000

Reexamination Certificate

active

06893886

ABSTRACT:
A method for processing one-dimensional nano-materials includes the following steps: providing a substrate (11); forming one-dimensional nano-materials (12) on the substrate, the one-dimensional nano-materials being substantially parallel to each other and each being substantially perpendicular to the substrate, the one-dimensional nano-materials cooperatively defining a top surface distal from the substrate; and applying physical energy (14) by means of a high-energy pulse laser beam to the top surface of the one-dimensional nano-materials. The resulting one-dimensional nano-materials have sharp, tapered tips (15, 15′). Distances between adjacent tips are approximately uniform, and are relatively large. This reduces shielding between adjacent one-dimensional nano-materials. The tips also contribute to a decreased threshold voltage required for field emission by the one-dimensional nano-materials.

REFERENCES:
patent: 6383923 (2002-05-01), Brown et al.
patent: 6719841 (2004-04-01), Chen et al.
patent: 6741019 (2004-05-01), Filas et al.

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