Semiconductor device manufacturing: process – Electron emitter manufacture
Reexamination Certificate
2005-05-17
2005-05-17
Blum, David S. (Department: 2813)
Semiconductor device manufacturing: process
Electron emitter manufacture
C438S666000
Reexamination Certificate
active
06893886
ABSTRACT:
A method for processing one-dimensional nano-materials includes the following steps: providing a substrate (11); forming one-dimensional nano-materials (12) on the substrate, the one-dimensional nano-materials being substantially parallel to each other and each being substantially perpendicular to the substrate, the one-dimensional nano-materials cooperatively defining a top surface distal from the substrate; and applying physical energy (14) by means of a high-energy pulse laser beam to the top surface of the one-dimensional nano-materials. The resulting one-dimensional nano-materials have sharp, tapered tips (15, 15′). Distances between adjacent tips are approximately uniform, and are relatively large. This reduces shielding between adjacent one-dimensional nano-materials. The tips also contribute to a decreased threshold voltage required for field emission by the one-dimensional nano-materials.
REFERENCES:
patent: 6383923 (2002-05-01), Brown et al.
patent: 6719841 (2004-04-01), Chen et al.
patent: 6741019 (2004-05-01), Filas et al.
Fan Shou-shan
Liu Liang
Blum David S.
Chung Wei Te
Hon Hai Precision Ind. Co. LTD
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