Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2002-08-30
2008-08-26
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S690000, C438S693000
Reexamination Certificate
active
07416962
ABSTRACT:
A method is provided for processing the back side of a semiconductor wafer after the wafer has been lapped. The process includes grinding the back side of the wafer to remove wafer material, to substantially eliminate lap damage from the back side of the wafer. The back side of the wafer may then be cleaned, etched, and polished, after which the front side of the wafer is polished. The back side grinding may be accomplished after the lapping without any other step of substantial removal of wafer material. The polishing of the back side of the wafer may be performed with a CMP machine and may produce a specular surface, visually free of damage under haze lamp inspection, with removal of about 0.5 microns of wafer material. After polishing the front side of the wafer, an epitaxial layer may be produced on the front side of the wafer.
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Gore David
Harrison Wesley
Vandamme Roland
Kolisch & Hartwell, P.C.
Siltronic Corporation
Tsai H. Jey
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