Method for processing a layered stack in the production of a...

Details Method for processing a layered stack in the production of a... Method for processing a layered stack in the production of a...

2007-06-12

2007-06-12

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Altering etchability of substrate region by compositional or...

C438S725000, C257SE21250

Reexamination Certificate

active

11216524

ABSTRACT:
A resist layer is deposited a resist layer on a first layer of a layered stack. The stack also includes a second layer below the first layer. The resist layer is processed with a lithographic method to achieve a first structured resist layer. At least a part of the first structured resist layer is trimmed to achieve a second structured resist layer having at least in parts a structure with a critical dimension smaller than obtainable by processing the resist with a lithographic method. The first layer is selectively removed from the second layer in the areas not covered by the second structured resist layer. The second layer is modified by implantation to become a layer with defined selectivity to the non-modified material. The remains of the first layer are removed. The non-modified structures of the second layer are removed to create a hardmask layer by the remaining layer. The layered stack is further structured with the hardmask layer.

REFERENCES:
patent: 6197687 (2001-03-01), Buynoski
patent: 6762130 (2004-07-01), Laaksonen et al.
patent: 6914293 (2005-07-01), Yoshino

Affiliated with

Also associated with

Rating

Method for processing a layered stack in the production of a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for processing a layered stack in the production of a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for processing a layered stack in the production of a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3852292