Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1985-04-01
1987-05-05
Saba, William G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576E, 148174, 148DIG7, 156612, 156643, 156653, 156657, 427 85, 427 86, 427 87, H01L 2120, H01L 21306
Patent
active
046629564
ABSTRACT:
A method for the prevention of dopant diffusion from the back side of a doped semiconductor substrate during epitaxial layer growth. The entire surface of the substrate is first covered with a cleanly etchable material. Around the entire first layer is formed a second dopant diffusion barrier layer. The front sides of the layers are then selectively etched away to expose the front side of the substrate upon which the epitaxial layer will be grown without contamination of dopant diffusion from the sealed back side of the substrate.
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Morgan H. Scott
Roth Scott S.
Steinberg Joe
Fisher John A.
Mossman David L.
Motorola Inc.
Myers Jeffrey Van
Saba William G.
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