Method for preventing the snap down effect in power rectifier wi

Details Method for preventing the snap down effect in power rectifier wi Method for preventing the snap down effect in power rectifier wi

1998-05-05

2000-09-05

Dang, Trung

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having structure increasing breakdown voltage

438141, 438133, H01L 21332

Patent

active

061141933

ABSTRACT:
A method for preventing the snap down effect in a power rectifier with higher breakdown voltage comprises the step of forming an isolation layer between the semiconductor substrate and the epitaxy layer. The isolation layer can prevent the dislocation occurred upon the semiconductor substrate from influencing the p-n junction atop. Therefore, the power rectifier manufactured by the method of the present invention can work under a higher breakdown voltage exceeding 450 V with reduced cost.

REFERENCES:
patent: 5432121 (1995-07-01), Chan et al.

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