Method for preventing the exposure of borophosphosilicate glass

Fishing – trapping – and vermin destroying

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437240, 437982, 437236, 148DIG133, H01L 2144

Patent

active

052848000

ABSTRACT:
An embodiment of the present invention is a semiconductor fabrication process that deposits an oxide layer after a step to make contact openings in a BPSG layer and before a contact reflow step. The oxide allows implant dopants to be properly activated in the contact reflow step without excessive reflow of the BPSG.

REFERENCES:
patent: 4948743 (1990-08-01), Ozaki
patent: 5094984 (1992-03-01), Liu et al.
Wolf; "Silicon Processing for the VLSI Era", vol. 1, 1987; pp. 367-371.

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