Method for preventing out-diffusion of phosphorous and boron in

Details Method for preventing out-diffusion of phosphorous and boron in Method for preventing out-diffusion of phosphorous and boron in

1992-09-09

1993-07-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 69, 437 72, 437 73, 148DIG50, 148DIG117, H01L 2176

Patent

active

052293173

ABSTRACT:
According to this invention, an isolation trench is formed in a semiconductor substrate. A first insulating film is formed on a surface of the semiconductor substrate and an inner surface of the trench. A silicon oxide film containing phosphorus and boron is buried in the trench in which the first insulating film is formed. A second insulating film pattern having a width larger than that of the trench is formed on the trench and a peripheral portion of the trench. The second insulating film pattern prevents out-diffusion phosphorus and boron in the silicon oxide film. The first insulating film which is not covered with the second insulating film pattern is removed to form a first insulating film pattern. The surface of the semiconductor substrate which is not covered with the first and second insulating film patterns is thermally oxidized.

REFERENCES:
patent: 4506435 (1985-03-01), Pliskin et al.
patent: 4571819 (1986-02-01), Rogers et al.
patent: 4740480 (1988-04-01), Ooka

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