Method for preventing microroughness and contamination during CC

Details Method for preventing microroughness and contamination during CC Method for preventing microroughness and contamination during CC

1995-05-02

1997-07-15

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 63, H01L 2170, H01L 2700, H01L 21302, H01L 21304

Patent

active

056482922

ABSTRACT:
A method of fabricating a charge coupled device (CCD) using etching processes rather than high temperature oxidation to form field regions. The method leaves in place at least one of a first insulation film and a second insulation film that have been formed over the surface of a first conductivity-type semiconductor substrate while (1) injecting channel stop ions into selected regions of a well region to thereby form separation regions between what will become photodiode regions corresponding to pixels of the CCD, while (2) forming a photodiode region for each pixel of said CCD, and while (3) forming charge transfer regions for selectively outputting charges formed at the photodiode regions. The method provides for improved operational performance of the CCD by preventing contamination of the substrate, photodiode regions and charge transfer regions during formation of the CCD.

REFERENCES:
patent: 5028556 (1991-07-01), Chang
patent: 5028970 (1991-07-01), Masatoshi
patent: 5236862 (1993-08-01), Pfiester et al.

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