Method for preventing memory from generating leakage current...

Details Method for preventing memory from generating leakage current... Method for preventing memory from generating leakage current...

2007-03-22

2008-12-30

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S063000, C365S214000

Reexamination Certificate

active

07471561

ABSTRACT:
A method for preventing a memory from generating a leakage current is disclosed. The memory includes a boundary memory cell and a neighboring memory cell. The neighboring memory cell is adjacent to the boundary memory cell. The method includes the following step. The first terminal of the neighboring memory cell is connected to the second terminal through a metal line.

REFERENCES:
patent: 6097660 (2000-08-01), Tsuchida et al.
patent: 6757197 (2004-06-01), Kamei

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