Method for preventing leakage in shallow trench isolation

Details Method for preventing leakage in shallow trench isolation Method for preventing leakage in shallow trench isolation

2006-09-19

2006-09-19

Parker, Kenneth (Department: 2815)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C438S430000

Reexamination Certificate

active

07109094

ABSTRACT:
Method for preventing sneakage in shallow trench isolation and STI structure thereof. A semiconductor substrate having a pad layer and a trench formed thereon is provided, followed by the formation of a doped first lining layer on the sidewall of the trench. A second lining layer is then formed on the doped first lining layer. Etching is then performed to remove parts of the first lining layer and the second lining layer so that the height of the first lining layer is lower than the second lining layer. A sacrificial layer is then formed on the pad layer and filling the trench. Diffusion is then carried out so that the doped ions in the first lining layer out-diffuse to the substrate and form diffuse regions outside the two bottom corners of the trench.

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Hong Xiao, Introduction to semiconductor manufacturing technology, 2001, Prentice-Hall Inc., Upper Saddle River, New Jersey 07458.

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