Method for preventing gate oxide damage of a trench MOSFET...

Details Method for preventing gate oxide damage of a trench MOSFET... Method for preventing gate oxide damage of a trench MOSFET...

2010-05-29

2011-12-27

Tran, Long (Department: 2829)

Semiconductor device manufacturing: process

Making conductivity modulation device

C438S197000, C438S206000, C438S212000, C438S270000, C438S272000, C257SE21016, C257SE27036, C257SE29015

Reexamination Certificate

active

08084304

ABSTRACT:
A method for preventing gate oxide damage of a trench MOSFET during wafer processing while adding an ESD protection module atop the trench MOSFET includes fabricate numerous trench MOSFETs on a wafer; add a Si3N4 isolation layer, capable of preventing the LTO patterning process from damaging the gate oxide, atop the wafer; add numerous ESD protection modules atop the Si3N4 isolation layer.

REFERENCES:
patent: 7585705 (2009-09-01), Pan et al.
patent: 2008/0258224 (2008-10-01), Hshieh

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