Method for preventing borderless contact to well leakage

Details Method for preventing borderless contact to well leakage Method for preventing borderless contact to well leakage

2005-05-17

2005-05-17

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S618000, C438S675000, C438S740000

Reexamination Certificate

active

06893937

ABSTRACT:
An inventive semiconductor chip is provided. Generally, shallow trenches containing field oxide are provided on a substrate. At least one semiconductor device is formed between the shallow trenches. An oxide layer is formed over the at least one semiconductor device and the field oxide. An etch stop layer is formed over the oxide layer. An inter layer dielectric layer is formed over the etch stop layer. At least one contact hole is etched through the inter layer dielectric layer, the etch stop layer and at least partially through the oxide layer. The contact hole is filled with a conductive material.

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Stanley Wolf and Richard N. Tauber, “Silicon Processing for the VLSI Era—vol. 1: Process Technology,” Lattice Press, Sunset Beach California (1986), p. 523.

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