Method for preventing auto-doping in the fabrication of metal ga

Details Method for preventing auto-doping in the fabrication of metal ga Method for preventing auto-doping in the fabrication of metal ga

1990-04-20

1991-06-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 57, 437 41, 437239, 437942, 148DIG4, H01L 21336

Patent

active

050249622

ABSTRACT:
A method of fabricating metal gate field effect transistors utilizing a rapid thermal oxidation process to form a sealing oxide which prevents auto-doping during the formation of the gate oxide.

REFERENCES:
patent: 4584205 (1986-04-01), Chen et al.
patent: 4729009 (1988-03-01), Ang
IEEE Electron Device Letters, vol. 6, No. 5, May 1985, pp. 205-207, J. Nulman et al., "Rapid Thermal Processing of Thin Gate Dielectrics Oxidation of Silicon".

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