Method for preventing arcing in a device during ion-implantation

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250398, H01J 37317

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active

045958378

ABSTRACT:
There is disclosed herein an ion implantation apparatus providing for electron flooding during ion implantation to not only neutralize the positive space-charge on an ion beam but also provide a slightly negative space-charge on the beam whereby accumulated positive charges on an insulated device is obviated and only harmless negative charges remain.

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patent: 4383180 (1983-05-01), Turner
Wu et al., RCA Review, vol. 44, Mar. 1983.
Varian Manual of DF-3000 Ion Implanter, Varian/Extrion Division Gloucester, MA.

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