Method for preventing and cleaning ruthenium-containing...

Cleaning and liquid contact with solids – Processes – Hollow work – internal surface treatment

Reexamination Certificate

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C134S001200, C216S067000, C216S076000, C438S720000

Reexamination Certificate

active

07107998

ABSTRACT:
Carbon monoxide gas is provided in a ruthenium-deposition apparatus to clean undesired ruthenium-containing deposits from apparatus surfaces. Carbon monoxide gas is mixed with reactant gases in apparatus tubing and in a ruthenium-deposition reaction chamber to inhibit formation of undesired ruthenium deposits on apparatus surfaces and to remove ruthenium deposits.

REFERENCES:
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patent: 6003526 (1999-12-01), Lo et al.
patent: 6074945 (2000-06-01), Vaartstra et al.
patent: 6537461 (2003-03-01), Nakahara et al.
patent: 2003/0037802 (2003-02-01), Nakahara et al.
Goodwin et al., “Reactive Metal Volatilization From Ru/Al2O3 As A Result Of Ruthenium Carbonyl Formation”, Applied Catalysis, Apr. 1, 1986, pp. 199-209, vol. 24, Elsevier Science Publishers B.V., Amsterdam, The Netherlands.
Pan et al., “Reactive ion etching of RuO2 thin films using the gas mixture O2/CF3CFH2”, J. Vac. Sci. Technol., Nov./Dec., 1994, pp. 3208-3213, vol. B 12, No. 8, American Vacuum Society.
Chandra et al., “Vapor Pressures of Osmium, Rhodium, and Ruthenium Carbonyls”, Journal of Phase Equilibria, Jul. 6, 1999, pp. 565-572, vol. 20, No. 6.
Nakahara et al., “Etching technique for ruthenium with a high etch rate and high selectivity using ozone gas”, J. Vac. Sci. Technol., Nov./Dec., 2001, pp. 2133-2136, vol. B 19, No. 6, American Vacuum Society.

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