Method for preventing Al-Cu bottom damage using TiN liner

Details Method for preventing Al-Cu bottom damage using TiN liner Method for preventing Al-Cu bottom damage using TiN liner

2009-09-30

2011-12-13

Li, Meiya (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S635000, C257S758000, C257S762000, C257S765000, C257S771000, C257SE21017, C257SE21020, C257SE21022, C257SE23151, C257SE23155, C257SE23157, C257SE23161, C257SE21582, C257SE21590, C257SE21591, C438S618000, C438S622000, C438S625000, C438S628000, C438S543000, C438S548000, C438S652000, C438S656000, C438S669000, C438S688000, C216S062000, C216S067000, C216S072000, C216S100000, C216S102000

Reexamination Certificate

active

08076778

ABSTRACT:
A semiconductor device and related method for fabricating the same include providing a stacked structure including an insulating base layer and lower and upper barrier layers with a conductive layer in between, etching the stacked structure to provide a plurality of conductive columns that each extend from the lower barrier layer, each of the conductive columns having an overlying upper barrier layer cap formed from the etched upper barrier layer, wherein the lower barrier layer is partially etched to provide a land region between each of the conductive lines, forming a liner layer over the etched stacked structure exposing the land region, and etching the liner layer and removing the exposed land region to form a plurality of conductive lines.

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