Method for pretreating semiconductor substrate by photochemicall

Details Method for pretreating semiconductor substrate by photochemicall Method for pretreating semiconductor substrate by photochemicall

1989-04-24

1995-11-28

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437235, 427582, 427583, H01L 2100, H01L 2102, H01L 21302, H01L 21463

Patent

active

054707994

ABSTRACT:
The present invention provides a method for removing a natural gas film or contaminant adhering on a surface of a silicon semiconductor substrate. The semiconductor substrate having the natural oxide film or contaminant adhered thereon is placed in a chamber. Then, a HCl gas is introduced into the chamber. The semiconductor substrate is heated at a temperature in the range of 200.degree..about.700.degree. C., while ultraviolet rays are irradiated into the chamber. According to the method, the reaction of the natural oxide with HCl gas is promoted by a synergistic effect of light and heat energy. Therefore, the natural oxide film or contaminant can be removed at a lower temperature with the help of the light energy.

REFERENCES:
patent: 4590091 (1986-05-01), Rogers, Jr. et al.
Wolf, S., Silicon Processing for the VLSI Era, vol. 1, 1986, p. 367.
Ghandhi, S., VLSI Fabrication Principles, p. 509, Wiley & Sons, 1983.
R. Sugino et al., "Through-Oxide Cleaning of Silicon Surface by Photo-Excited Radicals" Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo 1987, pp. 207-210.
E. Kinsbron et al., "Crystallization of Amorphous Silicon Films During Low Pressure Chemical Vapor Deposition", Appl. Phys. Lett. 42(9), 1 May 1983, pp. 835-837.

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