Method for preparing ZnO nanocrystals directly on silicon...

Details Method for preparing ZnO nanocrystals directly on silicon... Method for preparing ZnO nanocrystals directly on silicon...

2007-12-28

2010-06-08

Speer, Timothy M (Department: 1794)

Stock material or miscellaneous articles

Composite

Of silicon containing

C257S043000, C428S448000, C428S702000, C977S774000

Reexamination Certificate

active

07732054

ABSTRACT:
A method for preparing a ZnO nanocrystal directly on a silicon substrate includes the steps of: (S1) forming a Zn—Si—O composite thin film on the silicon substrate; and (S2) thermally treating the obtained thin film. Particularly, ZnO nanocrystals are formed in an amorphous Zn—Si—O composite thin film by controlling the composition of the Zn—Si—O composite thin film and heating temperature thereof. With the present invention method for preparing a ZnO nanocrystal directly on a silicon substrate, more possibilities are opened up for the applications of ZnO nanocrystals to an optoelectronic device in use of a silicon substrate.

REFERENCES:
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patent: 20060112056 (2006-10-01), None
Kumar et al., “Growth of ZnO nanocrystals in Silica by RF Co-Sputter Deposition and Post Annealing”, Nuclear Instruments and Methods in Physics Research B, vol. 244, (2006) pp. 91-94.
Peng et al., “White Light Emitting ZnO-Si02 Nanocomposite Thin Films Prepared by the Target Attached Sputtering Method”, Nanotechnology, vol. 17, (2006), pp. 174-180.
Leong et al., “Sol-Gel ZnO-SiO2 Composite Waveguide Ultraviolet Lasers”, IEEE Photonics Technology Letters, vol. 16, No. 11, (2004), pp. 2418-2420.

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