Method for preparing zinc oxide semi-conductor material

Details Method for preparing zinc oxide semi-conductor material Method for preparing zinc oxide semi-conductor material

2005-03-01

2005-03-01

Hiteshew, Felisa (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

C117S003000

Reexamination Certificate

active

06860937

ABSTRACT:
A method for preparing zinc oxide semiconductor material in which an organometallic compound containing zinc as a metal composition is introduced into a reaction chamber and the zinc-containing organic compound is vaporized to effect a specific decomposition reaction on a substrate, thereby forming a zinc oxide semiconductor material on the substrate. The zinc-containing organic compound employed is one having a low reactivity with oxygen in a vapor phase under the temperature atmosphere in the reaction chamber.

REFERENCES:
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patent: 01-194208 (1989-08-01), None
patent: 11-074202 (1999-03-01), None
patent: WO 8400178 (1984-01-01), None
Sato, H., et al., “Transparent conducting ZnO thin films prepared on low temperature subtrates by chemical vapour deposition using Zn(C5H7O2)2”, Thin Solid Films, No. 246, (1994), pp. 65-70.

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