Method for preparing superconducting oxide films by seeding form

Details Method for preparing superconducting oxide films by seeding form Method for preparing superconducting oxide films by seeding form

1989-01-26

1990-07-10

Beck, Shrive

Solid anti-friction devices, materials therefor, lubricant or se

Lubricants or separants for moving solid surfaces and...

Heavy metal or aluminum bonded directly to carbon

427 62, 427 431, 427 531, 427 541, 505730, 505729, 505742, 156603, B05D 512, B05D 306

Patent

active

049408429

ABSTRACT:
A superconducting oxide film is prepared by a method of seeding formation and heat treatment which comprises depositing a layer of a metal-oxide precursor on a predetermined substrate, forming a seed of a predetermined superconducting phase only in a locally limited region of the metal-oxide precursor at a boundary surface to the substrate by means of a solid-state reaction triggered by pulsed energy radiation, and then at least partially converting the metal-oxide precursor into the desired superconducting metal-oxide phase by a heat treatment in the oxygen atmosphere at a temperature below 800.degree. C.

REFERENCES:
patent: 4316785 (1982-02-01), Suzuki et al.
patent: 4383383 (1983-05-01), Mizutani
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Politis et al, "Preparation and Superconducting Properties of La.sub.1.8 Sr.sub.0.2 CuO.sub.4 and YBa.sub.2 Cu.sub.3 O.sub.6.5 ", MRS ed. by Gubser, Apr. 1987, pp. 141-144.
Tsurumi et al, "High-Tc Superconductivities of (Y.sub.1-x Yb.sub.x).sub.2 Ba.sub.4 Cu.sub.6 O.sub.14+Y (O<Y<25)", Jpn. J. Appl. Phys., vol. 26(5), May 1987, L 704-705.
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Lam et al, "MOSFETs Fabricated in {100} Single Crystal Silicon-on-Oxide Obtained by a Laser-Induced Lateral Seeding Technique", International Electron Devices Meeting, Technical Digest, Washington, D.C. (Dec. 1980), pp. 559-562.
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