Method for preparing size-controlled silicon carbide...

Organic compounds -- part of the class 532-570 series – Organic compounds – Silicon containing

Reexamination Certificate

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C556S466000

Reexamination Certificate

active

07906672

ABSTRACT:
The present disclosure relates to a method of preparing silicon carbon nanocrystals (SiC-NCs) in a size-dependent manner by reacting a compound of the Formula I: R1Si(X1)3, with a compound of the Formula II Si(X2)4(II) under conditions for the hydrolysis and condensation of the compound of the Formula I and the compound of the Formula II to form a siloxane polymer comprising repeating units of the Formula III: —[(R1SiO1.5)x(SiO2)y]—, followed by thermal processing of the siloxane polymer under conditions to form SiC-NC's. Optionally the SiC-NC's are liberated to provide free standing SiC-NC's.

REFERENCES:
Henderson, E.J. and Vienot, J.G.G., 41st Silicon Symposium, San Francisco, California, Apr. 24-26, 2008.
Henderson, E.J. And Vienot, J.G.G., “From Phenylsiloxane Polymer Composition to Size-Controlled Silicon Carbide Nannocrystals”, J. Am. Chem Soc. 2009, 131, 809-815.
Hurwitz. F.I. et al., “Characterization of the pyrolytic conversion of polysilsesquioxanes to silicon oxycarbides”, Journal of Materials Science 28, 1993, 6622-6630.
Wang Chia-Hsin et al., “Silicon Carbide Nanostructures from Reactions between Vapors of Organochlorosilanes and Liquid of Sodium-Factors Affecting Morphology and Compositions”, Journal of the Chinese Chemical Society, 2007, 54, 1477-1484.
Mutin, P Hubert, “Control of the Composition and Structure of Silicon Oxycarbide and Oxynitride Glasses Derived from Polysiloxane Precursors”, Journal of Sol-Gel Sciences and Technology 14, 27-38, 1999.
Tartaj Pedro, et al., “Electrokinetic Behavior and Stability of Silicon Carbide Nanoparticulate Dispersions”, J. Am. Ceram. Soc., 81 [2] 389-394, 1998.
Brequel, H. et al., “Study of the Phase Seperation in Amorphous Silicon Oxycarbide Glasses Under Heat Treatment”, NanoStructured Materials, vol. 11, No. 6, pp. 721-731, 1999.
Rosso, M.; Arafat, A.; Schroën, K.; Giesbers, M.; Roper, C. S.; Maboudian, R.; Zuilhof, H. Langmuir. 2008, 24, 4007-4012.
Schoell, S. J.; Hoeb, M.; Sharp, I. D.; Steins, W.; Eickhoff, M.; Stutzmann, M.; Brandt, M. S. Appl. Phys. Lett. 2008, 92, 153301.
Alekseev, S. A.; Zaitsev, V. N.; Botsoa, J.; Barbier, D. Chem. Mater. 2007, 19, 2189-2194.
Ma, J.; Shi, L. H.; Zhang, J. M.; Li, B. Y.; Shen, D. Y.; Xu, J. Chin. J. Poly. Sci. 2002, 20, 573-577.
Burns, G.T.; Taylor, R. B.; Xu, Y.; Zangvil, A.; Zank, G. A. Chem. Mater. 1992, 4, 1313-1323.
Liu, Q.; Wu, H. J.; Lewis, R.; Maciel, G. E.; Interrante, L. V. Chem. Mater. 1999, 11, 2038-2048.
Boury, B.; Corriu, R. J. P.; Douglas, W. E. Chem. Mater. 1991, 3, 487-489.
Monthioux, M.; Delverdier, O. J. Eur. Cer. Society, 1996, 16, 721-737.

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