Method for preparing semiconductor member

Details Method for preparing semiconductor member Method for preparing semiconductor member

1993-09-27

1994-12-20

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 71, 437 86, 437235, 437974, 148DIG12, H01L 21302

Patent

active

053745817

ABSTRACT:
A method for preparing a semiconductor member comprising steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on the porous silicon substrate at a first temperature; bonding a surface of the non-porous silicon monocrystalline layer on to another substrate having an insulating material on the surface thereof; etching the porous silicon by removing the porous silicon of the bonded substrate by chemical etching; and forming a monocrystalline silicon layer on the non-porous silicon monocrystalline layer by epitaxial growth at a second temperature higher than the first temperature.

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