Method for preparing semiconductor member

Details Method for preparing semiconductor member Method for preparing semiconductor member

1995-09-08

1998-11-24

Fourson, George R.

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

438466, 438960, 438977, H01L 2176

Patent

active

058406166

ABSTRACT:
A method for preparing a semiconductor member comprises process of making a porous Si substrate and then forming a non-porous Si monocrystalline layer on the porous Si substrate; primary bonding process of bonding the porous Si substrate and an insulating substrate via the non-porous Si monocrystalline layer; etching process of etching the porous Si to remove the porous Si by chemical etching after the primary bonding process; and secondary bonding process of strengthening the primary bonding after the etching process.

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